Place of Origin:
CHINA
Hàng hiệu:
KACISE
Chứng nhận:
CE
Model Number:
KSGYR111M-S
| Attribute | Value |
|---|---|
| Supply voltage VDDM | +2.7V~+3.6V |
| Bias ZRL | ±1°/s (0 LSB Typ) |
| Rate range I | ±400°/s |
| Non-linearity NI | ±0.5%FS |
| Cross-axis sensitivity CS | ±5% |
The KSGYR111M-S Digital Quartz MEMS GYRO Chip features superior bias output stability and low noise. This digital quartz gyroscope is based on quartz MEMS technology and manufactured using semiconductor processing techniques.
| Power Supply Parameters | ||
|---|---|---|
| Supply voltage VDDM | +2.7V~+3.6V | |
| Supply voltage for interface VDDI | +1.65V~+3.6V | |
| Product Performance | ||
| Scale factor So | 70 LSB/(°/s) ±2% | 16 bits, Ta=+25℃ |
| 17920 LSB/(°/s) ±2% | 24 bits, Ta=+25℃ | |
| Scale factor variation over temperature Spt | ±3% | VDDM=3V, Ta=+25℃ reference |
| Bias ZRL | ±1°/s (0 LSB Typ) | Ta=+25℃ |
| Bias variation over temperature A ZRLta | ±0.25°/h | -10℃~+50℃, Ta=+25℃ reference |
| Bias variation over temperature B ZRLtb | ±1°/h | -20℃~+80℃, Ta=+25℃ reference |
| Bias temperature coefficient ZRLs | 0.0016(°/s)/℃ (Typ) | VDDM = 3V, Average of absolute value, ΔT=1℃ |
| Rate range I | ±400°/s | |
| Non-linearity NI | ±0.5%FS | Ta=+25℃ |
| Cross-axis sensitivity CS | ±5% | Ta=+25℃ |
| Current consumption Iop1 | 900μA Typ | |
| Sleep current Iop3 | 3μA Typ | |
| Noise density Nd | 0.0015 (°/s)/√Hz | @ 10Hz, LPF default setting |
| Angle random walk N | 0.065 °/√h | |
| Environmental Specifications | ||
| Operating temperature TOPR | -20℃～+80℃ | |
| Storage temperature TSTG | -40℃～+85℃ | |
Unit: mm
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